175 DFN 8L ROHS

LS3954A LS3954 LS3955 LS3956 LS3958 LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER FEATURES LOW DRIFT IΔVGS1-2/ΔT│=5µV/°C max. LOW LEAKAGE IG=20pA TYP. en=10Nv/√Hz TYP. LOW NOISE ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise noted) Maximum Temperatures Storage Temperature -55 to +150°C Operating Junction Temperature -55 to +150°C Maximum Voltage and Current for Each Transistor1 -VGSS Gate Voltage to Drain or Source 60V -IG(f) Gate Forward Current Top View TO-71 & TO-78 50mV Top View SOIC Maximum Power Dissipation Device Dissipation @ Free Air - Total 400mW @ 25ºC2 ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise noted) SYMBOL CHARACTERISTIC │∆VGS1-2/∆T│max. Drift vs. Temperature LS3954A LS3954 LS3955 LS3956 LS3958 UNITS 5 10 25 50 100 µV/ºC CONDITIONS VDG = 20V, ID=200µA │VGS1-2│max. Offset Voltage 5 5 10 15 25 mV VDG =20V, ID=200µA SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNITS BVGSS Breakdown Voltage 60 -- -- V VDS= 0 IG= 1µA BVGGO Gate-to-Gate Breakdown 60 -- -- V IGG= ±1µA ID= 0 IS= 0 2000 4000 µS VDG= 20V VGS= 0 f = 1kHz VDG= 20V ID= 200µA VDS= 20V VGS= 0 TA = -55ºC to +125ºC CONDITIONS TRANSCONDUCTANCE gfss Full Conduction 1000 gfs Typical Operation 500 700 1250 µS │gfs1-2/gfs│ Differential -- ±0.6 ±3 % 0.5 2 5 mA -- ±1 ±5 % Pinchoff Voltage -1 -2 -4.5 V VDS= 20V ID= 1nA Operating Range -0.5 -- -4 V VDS= 20V ID= 200µA DRAIN CURRENT IDSS Full Conduction │IDSS1-2/IDSS│ Differential GATE VOLTAGE VGS(off) VGS GATE CURRENT -IG Operating -- 20 50 pA VDG= 20V ID= 200µA -IG High Temperature -- -- 50 nA VDG= 20V ID= 200µA TA=+125 ºC -IG Reduced VDG -- 5 -- pA VDG= 10V ID= 200µA -IGSS At Full Conduction -- -- 100 pA VDG= 20V VDS= 0 Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201130 07/25/2019 Rev#A13 ECN# LS3954A LS3954 LS3955 LS3956 LS3958 SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNITS CONDITIONS -- -- 35 µS VDG= 20V VGS= 0 1 µS VDG= 20V ID= 200µA OUTPUT CONDUCTANCE goss Full Conduction gos Operating -- 0.5 │gos1-2│ Differential -- 0.05 µS COMMON MODE REJECTION CMRR -20 log │ΔVGS1-2/ΔVDS│ -- 100 -- dB ΔVDS= 10 to 20V ID=200µA CMRR -20 log │ΔVGS1-2/ΔVDS│ -- 75 -- dB ΔVDS= 5 to 10V ID=200µA -- -- 0.5 dB VDS= 20V VGS= 0 RG=10MΩ f= 100Hz NBW=6Hz VDS= 20V ID= 200µA f= 10Hz NOISE NF Figure en Voltage -- -- 15 nV/√Hz NBW=1Hz CAPACITANCE CISS Input -- -- 6 pF CRSS Reverse Transfer -- -- 2 pF CDD Drain-to-Drain -- 0.1 -- pF VDS= 20V VDG= 20V 0.210 0.170 f= 1MHz ID= 200µA P-DIP TO-78 TO-71 VGS= 0 S1 G2 D1 SS SS D2 G1 S2 SOIC S1 G2 D1 SS SS D2 G1 S2 Note: All Dimensions in inches NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. Derate 4mWºC above 25ºC Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems develops and produces the highest performance semiconductors of their kind in the industry. Linear Systems, founded in 1987, uses patented and proprietary processes and designs to create its high performance discrete semiconductors. Expertise brought to the company is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company founder John H. Hall. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201130 07/25/2019 Rev#A13 ECN# LS3954A LS3954 LS3955 LS3956 LS3958